发明名称 DATA TRANSFER CIRCUIT AND SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a data transfer circuit whose data transfer rate is high and power consumption is low. SOLUTION: The data tranfer circuit is provided with a first selecting circuit for pre-charging the potentials of two signal lines among three signal lines and of residual one signal line, and a second selecting circuit for selecting and connecting two signal lines selected by the first selecting circuit to a receiving side circuit. Thereby, a pre-charge period of the signal line is included in a data transfer period so that a specific pre-charge period is not required after transfer of data, and that data transfer is accelerated.
申请公布号 JP2002329394(A) 申请公布日期 2002.11.15
申请号 JP20010131558 申请日期 2001.04.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHIKAWA MASATOSHI
分类号 G11C11/409;G11C7/10;G11C11/4094;H03K19/017;(IPC1-7):G11C11/409 主分类号 G11C11/409
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