发明名称 Methods and structures to form precisely aligned stacks of 3-dimensional stacks with high resolution vertical interconnect
摘要 Methods and structures to form precisely aligned stacks of 3-dimensional stacks with high resolution vertical interconnections, and associated stacks, structures and devices. Viewing ports are formed in a first nanostructure layer through which an alignment pattern on-a second nanostructure layer is visible when the first and second nanostructure layers are held in near contact before attachment. The second nanostructure layer is then aligned with the first nanostructure layer by viewing the alignment pattern through the viewing ports. Once the layers are aligned, the second nanostructure layer is attached to the first nanostructure layer.
申请公布号 US2006223220(A1) 申请公布日期 2006.10.05
申请号 US20060356717 申请日期 2006.02.17
申请人 BOWER ROBERT W 发明人 BOWER ROBERT W.
分类号 H01L51/40 主分类号 H01L51/40
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