| 摘要 |
Provided is a MEMS device that uses a SOI wafer, and a method of manufacturing the same. The MEMS device includes a SOI wafer consisted of a first silicon layer, a second silicon layer, and an insulating layer formed between the first and second silicon layers, and a protective substrate that is combined to the first silicon layer, wherein grounding via holes are formed through the first silicon layer, the insulating layer and the protective substrate, and filled with a conductive material, and ventilation holes to be connected to the grounding via holes are formed in the second silicon layer.
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