| 摘要 |
<p>A method for forming metal lines in a semiconductor device is provided to enhance the reliability of the semiconductor device by preventing footing phenomenon caused by contact between a photoresist layer and a nitride layer. A lower insulating layer, a metal layer(6), and an upper nitride layer(8) are sequentially stacked on a semiconductor substrate. A chemical amplified photoresist layer is formed on the upper nitride layer. By exposing and developing the chemical amplified photoresist layer using a DUV(Deep Ultra Violet) beam source, photoresist patterns(10') are formed. The metal layer is etched using the photoresist patterns as a mask, thereby forming metal line patterns. Then, the photoresist patterns are removed. A reaction protection layer is formed on the upper nitride layer before forming the chemical amplified photoresist layer so as to prevent footing phenomenon when the photoresist patterns are formed by chemical reaction between the chemical amplified photoresist layer and upper nitride layer.</p> |
