发明名称 Hyperthermal neutral beam source and method of operating
摘要 Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
申请公布号 US7358484(B2) 申请公布日期 2008.04.15
申请号 US20050238191 申请日期 2005.09.29
申请人 TOKYO ELECTRON LIMITED 发明人 ECONOMOU DEMETRE J.;CHEN LEE;DONNELLY VINCENT M.
分类号 H05H3/00 主分类号 H05H3/00
代理机构 代理人
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