发明名称 Transistor, Verfahren zu seiner Herstellung und Halbleiterbauelement mit einem solchen Transistor
摘要 The invention provides a process for production of a transistor that can form an oriented active layer by a convenient method while yielding a transistor with excellent carrier mobility. The process according to the invention is a process for production of a transistor with an active layer composed of an organic semiconductor compound-containing semiconductor film, the process comprising a step of stretching the semiconductor film and a step of pasting the semiconductor film onto the side on which the active layer is to be formed while heating and/or pressing, to obtain the active layer.
申请公布号 DE112006002267(T5) 申请公布日期 2008.07.17
申请号 DE20061102267T 申请日期 2006.08.30
申请人 SUMITOMO CHEMICAL CO. LTD. 发明人 YAMATE, SHINICHI
分类号 H01L21/336;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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