METHOD OF ANALYZING A WAFER SAMPLE

摘要

A method for analyzing a wafer sample is provided to easily set an exposure condition when a pattern is transferred to a wafer by using defects and setting a vulnerable point and an exposure margin. A first defect of a wafer sample having a plurality of shot regions exposed by different exposure conditions is detected(S100). A first region corresponding to an error range of a reference exposure condition among the different exposure conditions in the wafer sample, and a second region except for the first region are set(S200). Second defects being repeated in at least two shot regions among the first defects of shot regions included in the second region are detected(S300). A first reference image on which the repetitive second defects are displayed is acquired(S400). Positions of third defects corresponding to the second defects displayed on the first reference image among the first detects of the shot regions included in the first region are set to vulnerable points(S500).