| 摘要 |
PROBLEM TO BE SOLVED: To avoid a problem of deterioration in reliability of an interconnection caused by an increase in contact resistance, the occurrence of wiring hillock and the like.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a contact hole 13 which pierces an interlayer insulation film 12 formed on a semiconductor substrate 10; and a process of forming a contact plug CP embedded in the contact hole 13. In the formation process of the contact plug CP includes: a process of filling the contact hole 13 and forming a first metal film which covers a top face of the interlayer insulation film 12; a process of removing the first metal film formed on the top face of the interlayer insulation film 12 and forming a first plug part 14 in the contact hole 13; a process of etching back the top face of the interlayer insulation film 12 to make a top edge of a first plug part 14 project upward from the top face of the interlayer insulation film 12; and a process of selectively growing a second metal film so as to cover an exposed surface of the first plug part 14 to form a second plug part 18 having a diameter larger than a diameter of the first plug part 14.SELECTED DRAWING: Figure 1 |
