| 摘要 |
A semiconductor device which has a contact layer and prevents a trap phenomenon of electrons in an active layer, may include a substrate, a gate electrode arranged on the substrate, a gate insulating layer arranged on the gate electrode, an active layer which is arranged on the gate insulating layer and includes a first end part and a second end part opposite to the first end part, a contact layer overlapped with the second end part of the active layer, a first electrode connected to the first end of the active layer, and a second electrode which is separated from the first electrode and is connected to the contact layer. Thereby, the reliability and safety of the semiconductor device can be improved. |
