| 摘要 |
A light emitting device of an embodiment includes a first conductivity type semiconductor layer, an active layer arranged on the first conductivity type semiconductor, a second conductivity type first semiconductor layer arranged on the active layer, a first undoped semiconductor layer arranged on the second conductivity type first semiconductor layer, and a second conductivity type second semiconductor layer arranged on the first undoped semiconductor layer. So, the optical or electrical property of the light emitting device can be improved. |
