STRUCTURE AND FORMATION METHOD OF FINFET DEVICE

摘要

A structure and a formation method of a semiconductor device structure are provided. The semiconductor device structure comprises a semiconductor substrate and a fin structure formed on the semiconductor substrate. The semiconductor device structure also comprises a gate stack over a portion of the fin structure, and the fin structure comprises an intermediate portion under the gate stack and upper portions besides the intermediate portion. The semiconductor device structure further comprises a contact layer over the fin structure. The contact layer includes a metal material, and the upper portions of the fin structure also include the metal material.