| 发明名称 |
Semiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETS |
| 摘要 |
A semiconductor integrated circuit device and a method of manufacturing the same, wherein an MIS type memory transistor of a two-layered gate electrode structure is formed on the surface of a semiconductor substrate, and an MIS type transistor for a low voltage having a comparatively thin gate oxide film and an MIS type transistor for a high voltage having a comparatively thick gate oxide film are formed around the memory transistor. |
| 申请公布号 |
US4471373(A) |
申请公布日期 |
1984.09.11 |
| 申请号 |
US19810223140 |
申请日期 |
1981.01.07 |
| 申请人 |
HITACHI, LTD. |
发明人 |
SHIMIZU, SHINJI;KOMORI, KAZUHIRO;KOSA, YASUNOBU;SUGIURA, JUNE |
| 分类号 |
H01L21/28;H01L21/32;H01L21/82;H01L21/8247;H01L27/105;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L27/02;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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