| 摘要 |
PURPOSE:To prevent a breakdown from occurring due to the application of a high electric field by providing the steps of implanting high density impurity to the portions to become source and drain, activating the impurity, and forming source, drain and gate electrodes. CONSTITUTION:An SiO2 film 7 is formed on a GaAs substrate, and a photoresist film 8 is thinly formed by spin coating. When the film 8 is uniformly etched entirely and Si ions are implanted through the film 8, a structure that an operation layer 4 has a slope is formed. After the film 7, 8 are removed, an Si3N4 film is formed, Si ions are implanted, a high density ohmic region 10 is formed, annealed in alumine atmosphere, and activated. Then, after Au-Ge is deposited as source and drain electrodes 1, 3, it is alloyed, and Pt is formed as a gate electrode 2 to complete a GaAs Schottky barrier gate field effect transistor. Thus, the withstand voltage of the transistor can be raised.
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