| 摘要 |
PURPOSE:To enable a field effect transistor having low gate resistance and high noise characteristic by providing the step of depositing a multilayer metal film used as a mask when sidewise etching a metal for a gate electrode. CONSTITUTION:A patterned resist 16 is formed on an active layer 12 on a GaAs substrate 11, with the resist 16 as a mask aluminum is deposited to form an aluminum layer 13A and an aluminum gate electrode 13, and Ti, Mo, Ti, Au are sequentially deposited to form a multilayer metal film 14 for a mask and a multilayer metal layer 14A. Then, after the resist 15 and the layers 13A, 14A are removed by lifting OFF, with the film 14 made of Ti, Mo, Ti, Au as a mask the electrode 13 is sidewise etched with phosphoric acid solution, electrode forming metal 15 to become source and drain electrodes is formed in a self-aligning manner to form a field effect transistor.
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