| 摘要 |
PURPOSE:To realize stable oscillation in a single mode, by having double hetero- structure and composition in which luminous wavelength by shell-to-shell transition of inner shell electrons in transition metal impurities mixed in an active layer is made not shorter than one by recombination of injection carriers. CONSTITUTION:Transition metal impurities are mixed in an active layer of semiconductor laser having double hetero structure. To make a material forming the double hetero structure, zinc Zn-doped InP 11 serves as P-type clad layer, sulfur S-doped InP 12 as N-type clad layer, and erbium Er-doped InGaAsP 13 as active layer. Excitation is performed by current injection in which holes are injected from a P side electrode 14 and electrons into an N side electrode 15. Both sides of the active layer are formed in embedded composition of high resistance InP layer 16 so that the excitation current flows concentrated into the Er-InGaAsP 13 with effect. Thus, oscillation by shell-to-shell transition of inner shell electrons in the mixed transition metal impurities can be realized with extremely narrow gain width of 10<10>-10<11>Hz and stable frequency in a single axial mode. |
