发明名称 COMPOSANT SEMICONDUCTEUR DE PROTECTION CONTRE LES SURTENSIONS ET SURINTENSITES
摘要 Semiconductor component intended to protect electric circuits against overvoltages and overcurrents, particularly due to lightning. In order to improve the energizing conditions of said component, independently of the wave form of the overvoltage appearing between terminals, there is provided a structure concentric with a Zener diode (zone A) at the center of an auxiliary thyristor (zone B), which is itself at the center of a main thyristor (zone A). In the event of an overvoltage, the Zener diode conducts and establishes a trigger current for the auxiliary thyristor and the main thyristor. The auxiliary thyristor trips before the main thyristor and provides a current with steep rise slope which contributes to the uniform energization of the main thyristor. This principle may be extended to bidirectional structures.
申请公布号 FR2598043(A1) 申请公布日期 1987.10.30
申请号 FR19860006029 申请日期 1986.04.25
申请人 THOMSON CSF 发明人 PIERRE BACUVIER
分类号 H01L27/02;H01L27/07;H01L27/08;H01L29/87;(IPC1-7):H02H9/04;H02H1/04;H01L29/66 主分类号 H01L27/02
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