ELECTRODE STRUCTURE FOR COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To take out blue light to the outside of a semiconductor element through a metal electrode by arranging an metal electrode for injecting a current into an emission element and transmitting the light emitted therefrom on the upper surface of a compound semiconductor light emitting element. SOLUTION: A n-type ZnS first conductive layer 2, an n-type ZnS emission layer 4 and a ZnS insulation layer 5 for injecting holes are epitaxially grown sequentially on an n-type ZnS substrate 1. An n-type ZnS second conductive layer 3 having carrier concentration higher than the first conductive layer 2 is formed by irradiating the surface of a growth layer partially with light at the time of growing the first conductive layer 2. A positive electrode 7 is formed by depositing gold directly above the second conductive layer 3 on the insulation layer 5. A negative electrode 8 is formed by applying indium-mercury entirely to the rear side of the substrate 1 and then heating the substrate 1 in high purity hydrogen. Consequently, blue light passes through the positive electrode 7 and is taken out efficiently to the outside of a compound semiconductor element.