| 摘要 |
PURPOSE:To provide the manufacture of a Schottky barrier diode stable in property and high in withstand voltage. CONSTITUTION:This manufacture includes a process of forming a single-crystal layer 20 of one conductivity type on one side of a semiconductor substrate 10 of the same conductivity type, a process of forming a diffusion layer 30 of the opposite conductivity type where the concentration of impurities is higher at the surface part and is lower at the depth, on the single crystal layer, and a process of forming a groove 40 by concentration-difference etching after forming an etching mask on the single-crystal layer. Furthermore, this has a process of forming an oxide film 41 on the bottom of the groove Schottky interface 24, and then, removing this oxide film so as to expose the single-crystal layer and also to form a guard ring, a process of forming an insulating film 33 on the single-crystal layer, a process of forming a Schottky diode 60, and a process of forming an ohmic electrode 70. |
