发明名称 |
Semiconductor processing method of producing an isolated polysilicon lined cavity and a method of forming a capacitor |
摘要 |
A semiconductor processing includes: a) providing an area atop a semiconductor wafer to which electrical connection to a polysilicon containing component is to be made; b) providing a layer of first material atop the semiconductor wafer, the first material layer having an upper surface; c) providing a contact opening in the layer of first material to the area, the contact opening having a selected open cross dimension; d) providing a layer of polysilicon to a selected thickness atop the layer of first material and within the contact opening to contact the area, the selected thickness being less than one-half the open dimension such that polysilicon less than completely fills the contact opening and thereby defines an outwardly open polysilicon lined cavity; e) with the wafer having the polysilicon lined cavity outwardly open, chemical mechanical polishing with a chemical mechanical polishing slurry the polysilicon atop the first material layer to the upper first material layer surface to define an isolated polysilicon lined cavity; and f) removing chemical mechanical polishing slurry residuals from the outwardly open polysilicon lined cavity.
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申请公布号 |
US5391511(A) |
申请公布日期 |
1995.02.21 |
申请号 |
US19930000891 |
申请日期 |
1993.01.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DOAN, TRUNG T.;DENNISON, CHARLES H. |
分类号 |
H01L21/02;H01L21/321;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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