| 摘要 |
PURPOSE:To provide a mask for lithography having an exposure pattern of fine width which exceeds the limit of photolithography technique. CONSTITUTION:A side wall 7 composed of material which absorbs X-rays is formed in an island-shaped part 3a composed of material different from a mask substrate wherein a coating film is formed on a substrate. When the island- shaped part 3a is eliminated, the side wall 7 only is left, which can be used as an absorber pattern 8. The line width of the absorber pattern 8 is determined only by the width of the side wall 7, i.e., the thickness of an absorber film 6, so that the width superior to lithography is possible. By using material which absorbs X-rays as the absorber film 6, a completed mask can be used as the mask of X-ray lithography. Since the mask of X-ray lithography is projected in a 1:1 manner, the title method wherein a fine exposure pattern is formed becomes more effective. |
