| 摘要 |
PROBLEM TO BE SOLVED: To obtain a sputtering target for formation of high dielectric film, free from occurrence of soft error, by specifying the<226> Ra concentration of the compound oxide of Ba and Ti and forming a perovskite structure. SOLUTION: By constituting a sputtering target of a compound oxide of Ba and Ti or a compound oxide of Ca, Sr, and Ti, in which the concentration of Ra with 226 mass number (<226> Ra) is regulated to <=50mBq/g, and also providing a perovskite structure, the sputtering target, capable of forming an oxide high dielectric film, in which alpha dosage is <=0.01CPH/cm<2> and occurrence of soft error is negligible, can be obtained. This target can be formed by mixing the powders of organic salts of Ba, Sr, and Ti, each having<226> Ra concentration reduced to <=50mBq/g, burning the resultant powder mixture, and subjecting the resultant compound oxide powder to hot pressing. |
