发明名称 Semiconductor cut-off device and method of manufacture
摘要 The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.
申请公布号 GB9522346(D0) 申请公布日期 1996.01.03
申请号 GB19950022346 申请日期 1995.11.01
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO. LTD. 发明人
分类号 H01L27/04;H01L21/822;H01L23/60;H01L27/02 主分类号 H01L27/04
代理机构 代理人
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