| 摘要 |
A chuck for holding an object by means of an electrostatic field consists of a carrier (3), mfd. from an electrically conducting material, with a layer of AlN (4) applied by CVD techniques. The carrier has at least one electrode that contacts a substrate (5). Also claimed is the method of prodn. of the chuck as described above where the AlN layer is applied by reaction of AlCl3 and NH3 at a pressure of 30 - 1000 mbar, while the carrier and substrate are held at a temp. of 700 - 1000 deg C. |
