| 摘要 |
PURPOSE:To decrease ON resistance without increasing the area of an element, by forming current paths in the direction of the thickness and the direction along the main surface of a semiconductor substrate. CONSTITUTION:The following processes are provided; buried layer, well layer for C/MOS, oxidation of source, field and gate, polycrystal silicon for gate, D-MOS source, N- and P-MOS, surface protection and wiring. In these processes, a current path in the direction from a buried layer 2 to the channel of a D-MOS FET (transversal direction) and a current path in the longitudinal direction from a drain 13 to the buried layer 2 are formed. Thereby, the cross-sectional area of current path is increased, and the resistance is reduced. As the result, the ion resistance of a D-MOS FET is decreased, and the driving capability per unit area of a transistor is increased. The current concentration on the surface hardly generates, and the reliability of element is improved. |
