| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device which prevents an increase in wiring resistance in a contact hole even if a contact hole connecting a lower first wiring and an upper second wiring is formed at a position shifted with respect to the first wiring. SOLUTION: A first Al-Si-Cu wiring 2 is formed on a first interlayer dielectric film 1. Then, a second interlayer dielectric film 3 is formed, and smoothing is performed, so that a contact hole 4 is formed. In this case, the contact hole 4 is formed at a position shifted from the first Al-Si-Cu wiring 2. Next, after surface treatment, a Ti film 5 is formed on the entire surface of the interlayer dielectric film 3, then Ar sputte-etch ring is performed to render exposed end position and side wall of the first Al-Si-Cu wiring 2 a slope surface, and a second Al-Si-Cu wiring 6 is formed. As the side wall of the first Al-Si-Cu wiring 2 is a slope surface, the second Al-Si-Cu wiring 6 is completely buried in the contact hole 4, thus the entire slope surface of the first Al-Si-Cu wiring 2 makes a continuity. |
