| 摘要 |
PROBLEM TO BE SOLVED: To obtain a radiation ray detecting element having a small leakage current without requiring a large-scale equipment and without increasing number of process and production cost. SOLUTION: In a diode on which a junction (amorphous silicon layer 8 and copper surface electrode 4), having rectifying property, is formed on one surface of a semiconductor substrate (single crystal silicon board 1) and an ohmic electrode (lower surface electrode 5) is formed on the other surface, the surface of its cross section 9 is covered by a conductive layer 11, and the conductive layer 11 is connected to the lower surface electrode 5. As a result, the leakage current in reverse direction can be made small, even when the distance between the upper surface electrode 4 and the cross section 9 is shorter than the diffusion distance of the minority carrier of the semiconductor substrate. Also, the same effect can be obtained by having the cross section 9 as an etching surface.
|
