发明名称 |
Structure and fabrication of power mosgets including termination structures |
摘要 |
A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002) of substantially uniform thickness lies over the active and termination areas. A main polycrystalline portion (2003A/2003B) lies over the first insulating layer largely above the active area. First and second peripheral polycrystalline segments (2003C1 and 2003C2) lie over the first insulating layer above the termination area. A gate electrode (2016) contacts the main polycrystalline portion. A source electrode (2015A/2015B) contacts the active area, the termination area, and the first polycrystalline segment. An optional additional metal portion (2019) contacts the second polycrystalline segment. The MOSFET is typically created by a five-mask process. A defreckle etch is performed subsequent to metal deposition and patterning to define the two peripheral polycrystalline segments. <IMAGE> |
申请公布号 |
SG48915(A1) |
申请公布日期 |
1998.05.18 |
申请号 |
SG19960003728 |
申请日期 |
1994.07.22 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
HSHIEH FWU-IUAN;CHANG, MIKE, F.;CHEN JUN WEI;OWYANG KING;PITZER, DORMAN, C.;LINDE VAN DER JAN |
分类号 |
H01L21/28;H01L21/316;H01L21/322;H01L21/336;H01L29/06;H01L29/10;H01L29/40;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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