发明名称 Vacuum envelope manufacture for integrated electron source of e.g. Spindt-type field emission device
摘要 The method first solders the cathode substrate (1) to the second substrate by a sealing material (4) which contains lead titanium oxide to reduce the melting point and adjust the thermal expansivity. The grid electrodes (3) are then lead through the soldered part and the space is evacuated to obtain a vacuum. Grid electrodes are formed from a niobium film on an insulating substrate which is then subject to cathodic reactive atomisation with oxygen or nitrogen or reactive ion epitaxy. The film is 200-400 nm thick with an oxide layer with an oxide or nitride layer about 5 nm or more thick.
申请公布号 FR2756416(A1) 申请公布日期 1998.05.29
申请号 FR19970014625 申请日期 1997.11.21
申请人 FUTABA DENSHI KOGYO KABUSHIKI KAISHA 发明人 MASAHARU TOMITA;SHIGEO ITOH;HISATAKA OCHIAI;TSUYOSHI INUKAI
分类号 H01J29/90;H01J9/24;H01J29/46;H01J31/12;(IPC1-7):H01J1/88;H01J9/02 主分类号 H01J29/90
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