RESIST MATERIAL AND RESIST PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a chemical amplification type resist material having high sensitivity of <=5mJ/cm<2> required by ArF lithography and capable of ensuring stable patternability. SOLUTION: This resist material contains an acid sensitive compd. and an acid generating agent which generates an acid when exposed with radiation. The acid sensitive compd. contains structural units each having a protected alkali-soluble group contg. a part contg. an alicyclic hydrocarbon group with -CH2 -R (R is methyl, ethyl, propyl or isopropyl) bonded to C of the hydrocarbon group and the alkali-soluble group is released by the generated acid and makes the acid sensitive compd. alkali-soluble.