| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a magnetic thin film, enabling the characteristic of the magnetic thin film to be improved by forming a ferrous film on a substrate in a plasma of nitrogen atmosphere and the magnetic thin film on the ferrous film in a vacuum. SOLUTION: In a method for forming a magnetic thin film, wherein a ferrous film is formed on a substrate in a plasma, containing nitrogen gas or a gas containing nitrogen atoms and the magnetic thin film, is formed on the ferrous film, a magnetic thin film of which a nitride peak is not observed in X-ray diffraction is formed, within condition ranges where Te<=6 (eV), and Ne/ R>=5×10<6> (cm<-3> .Å<-1> .sec), where Te and Ne are respectively electron temperature and electron density of plasma near the substrate surface in forming a ferrous film, respectively, and R is formation rate of the ferrous film.
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