| 摘要 |
PROBLEM TO BE SOLVED: To improve the withstand voltage characteristics of a dielectric thin- film capacitor. SOLUTION: An Al film 2 is formed on an alumina substrate 1. After that, the Al film 2 is subjected to anode oxidation treatment for forming an alumina oxide film 3 on the surface of the Al film 2. The alumina oxide film 3 is subjected to patterning for forming a lower electrode 4. A dielectric thin film 6 is formed on the lower electrode 4. In addition, an upper electrode 7 is formed on the dielectric thin film 6 for manufacturing a thin-film capacitor 10.
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