| 摘要 |
PROBLEM TO BE SOLVED: To provide a method, of forming an interconnection, in which a fine thin-film interconnection with a small contact resistance can be formed surely on a thick-film interconnection by a lift-off method. SOLUTION: A resist pattern 5 is formed on a thin-film electrode (interconnection) 3, a resist residue which remains on the surface of the electrode 3 and a resist residue which is put into the inside of the electrode 3 are removed, and the thin-film interconnection 7 is formed by the lift-off method on the surface of the electrode 3 from which the resist residue has been removed. The resist residue is removed by a chemical method such as a UV ashing method, an RIE method or the like. Alternatively, the resist residue is removed by a physical method such as an ion milling method or the like.
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