| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD device which is suitable for rapidity of process development and realizes film formation which is excellent in coverage in a low temperature rapid film formation process and excellent in uniformity by eliminating problems of a single-wafer basis CVD device and a batch type CVD device. SOLUTION: In a CVD device, a gas injection head 11 is provided, process gas is injected from the head 11 to a substrate 14 arranged in a film formation chamber 10, and a thin film is formed in a surface of the substrate 14. The device has gas switching means (stacked valves 31, 32) for switching process gas to be supplied to the gas injection head 11 gradually; and a control means for switching process gas to be supplied to the gas injection head 11 gradually by controlling a gas switching means, so that process gas whereto the substrate 14 is exposed is switched gradually in any point on the film formation surface of the substrate 14, any point on a film formation surface of the substrate 14 is subjected to injection of process gas in the same conditions, and it is subjected to at least one revolution until thin film formation process is finished.
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