Preparation of trench structures with oxidation layers including cladding of trench inner region formed in semiconductor region, deposition of a further layer and oxidation

摘要

Preparation of trench structures with oxide cladding involving: (a) formation of a semiconductor region; (b) formation of a trench (30); (c) cladding of the trench inner region with a first oxidation layer; (d) formation or deposition of a material layer (50) inside the trench; and (e) use of a second oxidation step with deposition of a second oxidation layer. Independent claims are included for: (1) an integrated arrangement or chip with at least one trench structure; and (2) a semiconductor element, especially a trench structure transistor device, trench transistor or field plate transistor.