MEMORY SYSTEM WITH FLASH MEMORY CAPABLE OF COMPENSATING REDUCTION OF READ MARGIN BETWEEN STATES DUE TO HOT TEMPERATURE STRESS

摘要

A memory system with a flash memory capable of compensating reduction of read margin due to high temperature stress is provided to assure read margin between adjacent states even if a threshold voltage is varied due to electric field coupling/F-poly coupling and HTS(High Temperature Stress). A memory system includes a flash memory and a memory controller for controlling the flash memory. The memory controller judges whether program data provided from a host during a program operation mode is stored in the flash memory. The memory controller performs a dummy program operation on a word line next to a final word line where the program data is stored, when all the program data is stored in the flash memory.