COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION AND METHOD FOR RESIST PATTERN FORMATION

摘要

[PROBLEMS] To provide a composition for resist underlayer film formation, which has a large selection ratio in a dry etching rate, has desired k value and refractive index n at a short wavelength, for example, in an ArF excimer laser and, at the same time, has solvent resistance. [MEANS FOR SOLVING PROBLEMS] A composition for the formation of a resist underlayer film for lithography, characterized in that the composition comprises a linear polymer having on its main chain at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure and at least one alkoxyalkyl group or hydroxyalkyl group is connected directly to the aromatic ring or the nitrogen atom.