Method for structuring a surface by means of reactive ion-beam etching, structured surface and uses

摘要

A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material by reactive-ion etching, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple silicon oxide or a mixed silicon oxide, most of the oxides in the case of a mixed oxide being silicon oxide, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the silicon of the oxide, a molar percentage of the species in the material ranging from 1 mol % or even up to 50 mol % while remaining below the percentage of the silicon oxide, at least most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the etching; structuring the surface of the hybrid material, without masking, with etching that lasts less than 30 minutes over an etching area greater than 1 cm2, until the array of features is formed, the structuring optionally being accompanied by heating of the hybrid material.

主权项

1. A process for forming at least one array of irregularities or features that are submicron-size in height and that have at least one characteristic lateral dimension that is micron- or submicron-size, over a surface of a material by reactive-ion etching, the process comprising:
supplying said material with a thickness at least equal to 100 nm, the material being a solid hybrid material that comprises:
a simple silicon oxide or a mixed silicon oxide, a majority of oxides in the case of a mixed oxide being silicon oxide, an oxide molar percentage in the material being at least 40%; andat least one species, a molar percentage of the at least one species in the material ranging from 1 mol % up to 50 mol % while remaining below the percentage of said silicon oxide, at least most of the at least one species having a largest characteristic dimension smaller than 50 nm, optionally heating said hybrid material before carrying out said reactive-ion etching; after said supplying and said optional heating, structuring the surface of said hybrid material, without masking, with the reactive-ion etching that lasts less than 30 minutes over an etching area greater than 1 cm2, until said array of features is formed, the structuring optionally being accompanied by heating of the hybrid material, wherein said solid hybrid material is a film deposited by physical vapor deposition, on a substrate, by codeposition of the at least one species and the silicon oxide, the at least one species being a metal species selected from the group consisting of copper, silver and gold, using metal targets in an oxygen atmosphere.