| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment device capable of promoting the nitriding of a high dielectric constant film, while suppressing the nitriding of an interface layer film.SOLUTION: A substrate W where a high dielectric constant gate insulator film is deposited on a silicon base material while sandwiching an interface layer film is housed in a chamber 6. An ammonia atmosphere is formed in the chamber 6 by supplying a mixed gas of ammonia and nitrogen gas, and then the surface of the substrate W is irradiated with flash light from a flash lamp FL for 0.2-1 second in the ammonia atmosphere. The high dielectric constant gate insulator film is thereby heated in the ammonia atmosphere, and nitriding treatment of the high dielectric constant gate insulator film progresses. Since the flash light irradiation time is extremely short, nitrogen does not reach the interface layer film, formed on the base of the high dielectric constant gate insulator film, and the interface layer film is never nitrided.SELECTED DRAWING: Figure 1 |
