Bipolarer Hochfrequenztransistor

摘要

An RF transistor having a suitably doped and patterned semiconductor chip (1), exhibiting a base, collector and emitter contact (2, 3, 4), of a doped Si substrate, which is enclosed by a casing (8) and the contact of which is connected to the respective base, collector and emitter terminal (6, 7, 5) of the casing, is intended to provide high gain at frequencies above 1GHz in its casing. The base, collector and emitter contact (2, 3, 4) is provided on the top of the semiconductor chip (1), the semiconductor chip (1) is arranged with its underside on the emitter terminal (5) of the casing (8) which is constructed as RF earth, the emitter contact (4) is connected at a short distance to the emitter terminal (5) of the casing (8) and the base and collector contact (2, 3) are in each case connected to the respective base and collector terminal (6, 7) via at least one bond wire (9).