| 摘要 |
PURPOSE:To obtain the titled device excellent in high frequency characteristics and productivity and available for self-alignment to a great degree by a method wherein a gate metallic electrode is provided in contact with both the upper surface of a polycrystalline Si region of a high impurity concentration and a part of an insulation layer region, and each metallic electrode is so provided on the plane different therefrom that the horizontal distance from the gate metallic electrode becomes 0. CONSTITUTION:It is contrived to include a region 1 having a reverse conductivity type to that of a channel region 8 and provided in contact with the channel region 8 to form a gate junction, the polycrystalline Si region 7 of a high impurity concentration of a rectangular cross-section provided on this region 1 in contact therewith, electric insulation layers 10 and 11 of overhang cross-sections provided on both sides of this polycrystalline Si region 7 in contact therewith, the gate metallic electrode 6 provided in contact with both the upper surface of the above-mentioned polycrystalline Si region 7 and a part of said insulation layer regions 10 and 11, and each metallic electrode 4 and 5 of the source and drain so provided on the plane different from that of this gate metallic electrode 6 that the horizontal distance from the gate metallic electrode 6 becomes 0. |
