| 摘要 |
PURPOSE:To obtain a semiconductor element of less deterioration of BVEBO and current density by a method wherein titanium-platinum-gold are laminated in this order for electrodes on an active element of a semiconductor substrate, a wiring which combines active elements is formed of aluminum, and a platinum layer is formed at least between the gold and the aluminum. CONSTITUTION:The titled semiconductor element is equipped with a collector 1 formed on the semiconductor substrate, a base 2, an emitter 3, an oxide film 4 on the main surface, a titanium electrode 5 in contact with the base 2, the emitter 3, etc., a platinum electrode 6 provided thereon, a gold electrode 7 provided further thereon, and the platinum layer 8 so provided that the following both do not directly contact with each other, in order to prevent the reaction with the gold of the gold electrode 7 and the aluminum of the aluminum wiring 9. Thereby, the reliability can be improved, since the electrode on the semiconductor active element is formed of titanium-platinum-gold; and the manufacture can be performed at a low cost, since the wiring part is formed of aluminum. |
