发明名称 Double crucible Czochralski crystal growth method
摘要 An apparatus useful for double crucible Czochralski crystal growth comprises an inner crucible fixed within an outer crucible wherein the inner crucible contains an extra volume or reservoir of semiconductor melt when flow of semiconductor melt from the outer crucible into the inner crucible through means interconnecting the crucibles ceases.
申请公布号 US4456499(A) 申请公布日期 1984.06.26
申请号 US19820400570 申请日期 1982.07.22
申请人 AT&T TECHNOLOGIES, INC. 发明人 LIN, WEN
分类号 C30B15/12;(IPC1-7):C30B15/04 主分类号 C30B15/12
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