| 摘要 |
PURPOSE:To reduce in size a resistor in a semiconductor device by providing a resistor made of a Schottky barrier formed between a laminated metal film and a semiconductor film. CONSTITUTION:Electrode wirings 4, 6 are formed of metal silicide, and Schottky barriers generated in a boundary between the wirings 4 and a nondoped polycrystalline silicon film 5, and in a boundary between the wirings 6 and a nondoped polycrystalline silicon film 5 are utilized as high resistance sections 7. When the wirings 4 are formed of the polycrystalline silicon containing impurity as a material, even if a nondoped polycrystalline silicon layer is formed thereon, the barrier is not formed, and its resistance value becomes insufficient. Thus, the number of the boundaries generated from the barriers is increased by inserting a new nondoped polycrystalline silicon film 8 and electrode wirings 9 between the wirings 4 and the film 5, and a high resistance part 7 is formed in three layers. Thus, a semiconductor device in which a high resistor having a small occupied area of a level surface can be obtained. |
