发明名称 PATTERN FORMATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make constant matching redundancy between a contact hole and a wiring upon finishing when there are provided contact holes having large and small sizes by forming a mask for a larger size contact hole smaller than a finished size thereof taking into consideration of a conversion difference in a pattern formation process. CONSTITUTION:For contact holes having relatively larger and smaller patterns, if a smaller pattern is opened according to its design, a larger pattern becomes larger than a designed one. To solve this, a conversion difference in a pattern formation process is taken into consideration. More specifically, in order to control the matching redundancy between the contact hole and a wiring, a mask size is previously slightly smaller for the larger contact hole and excessive exposure is applied such that the smaller pattern is formed as designed. A difference between a mask size and a finished size does not have the deeper size for patterns of 3mum or more. Accordingly, the masks are all rendered dimensional correction uniformly for patterns of 3mum or more. Thus, a matching redundance between a contact hole and a wiring can be made constant.
申请公布号 JPH02100341(A) 申请公布日期 1990.04.12
申请号 JP19880252701 申请日期 1988.10.06
申请人 TOSHIBA CORP 发明人 ABE MASAYASU;MASE KOICHI;KATSURA TOSHIHIKO
分类号 H01L21/302;H01L21/027;H01L21/30;H01L21/3065;H01L21/768;H01L23/522 主分类号 H01L21/302
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