| 摘要 |
<p>PURPOSE:To establish a practical method which makes it possible to improve a computation efficiency on the occasion of estimation of a dynamic characteristic by simulation and to increase the precision and reliability of the result of simulation, by combining a state equation for the inside of a semiconductor device with a performance equation for an external circuit. CONSTITUTION:On the occasion when a state equation for a semiconductor device is combined with a performance equation for an external circuit with a voltage and a current used as parameters, the performance equation is transformed into an equation of an integration type containing a time quadrature term of the voltage, for instance. Then, an initial value of the voltage is specified for each time variation, the current is computed by the state equation and the performance equation respectively, and then the initial value of the voltage obtained by correcting a difference between two computed values is given to the next time variation, or the difference between the two computed values is corrected by repeating the computation within the same time variation.</p> |
