| 摘要 |
PURPOSE:To lower a threshold current value, to increase an ON-OFF ratio and to enable response at high speed by thinning the film thickness of a channel region through the ion implantation of oxygen or nitrogen and forming structure in which the film thickness is made thinner than that of a source region and a drain region shaping contacts. CONSTITUTION:A nonsingular crystal silicon layer 9 is formed onto an insulating substrate 1, and etched to a required shape, the layer 9 is shaped so that a resist 10 is not left on a channel region 4, and the ions of oxygen, etc. are implanted. A resist mask is peeled, and a gate insulating film 5 is formed by thermally oxidizing the nonsingular crystal silicon layer 9. A gate electrode 6 is shaped, and a source region and a drain region 3 are formed through the implantation of impurity ions. An inter-layer insulating film 7 is shaped, a contact hole is formed, and a source electrode and a drain electrode 8 are shaped. |
