| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser excellent in laser characteristics by setting the product of the concentration of Si in an Si doped n-type GaAs substrate and the concentration of Se in an Se doped n-type AlGaAs clad layer at a specified value or below. SOLUTION: When a current is fed, holes flow from a P side electrode 9 through a P type GaAs contact layer 8, a P type GaAs cap layer 6, a P type AlGaAs clad layer 5 while electrons flow from an n-type electrode 10 through an Si-GaAs substrate 1, an n-type GaAs buffer layer 2 and an n-type AlGaAs clad layer 3 and implanted into a GaAs/AlGaAs SCH-QW active layer 4. Consequently, recombination of holes and electrons takes place in the QW layer of active layer 4 to emit induction emission light to start laser oscillation from an outgoing part 41. When the product of the concentration of Si in Si-GaAs substrate and the concentration of Se in n-type AlGaAs clad layer is set at 1.4×10<36> cm<-6> or below, a semiconductor laser having excellent characteristics where remote junction is not produced can be obtained.
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