MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN
摘要
This method of removal of irregularities and highly defected regions of the surface of crystals and epitaxial layers of GaN and Ga1-x-yAlxInyN characterized by mechano-chemical polishing on the soft polishing pad under pressure in presence of chemical etching agent of water solution of bases of the total concentration above 0.01N in time longer than 10 seconds after which the agent is replaced by the pure water without interruption of the polishing and polishing by at least 1 minute and subsequent diminution of the load and stopping of the machine and then the polished GaN crystal or GaA1InN epitaxial layer is removed of the polishing machine and dried in the stream of dry nitrogen.
申请公布号
WO9845511(A1)
申请公布日期
1998.10.15
申请号
WO1998PL00010
申请日期
1998.03.13
申请人
CENTRUM BADAN WYSOKOCISNIENIOWYCH POLSKIEJ AKADEMII NAUK;POROWSKI, SYLWESTER;GRZEGORY, IZABELLA;WEYHER, JAN;NOWAK, GRZEGORZ
发明人
POROWSKI, SYLWESTER;GRZEGORY, IZABELLA;WEYHER, JAN;NOWAK, GRZEGORZ