发明名称 DEVICE AND METHOD FOR GRINDING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the phenomenon that an upper layer material in a grinding pad is locally deformed by the load from an outermost circumferential part of a semiconductor wafer by specifying the hardness of the upper layer material and a lower layer material of the grinding pad. SOLUTION: The hardness of a hard material 7 of which an upper layer of a grinding pad 9 is formed is set to around 95 in accordance with JIS K 6301. The hardness of a soft material 8 of which a lower layer of the grinding pad 9 is formed is set to >=75 to <=85 in accordance with JIS K6301. Because the soft material 8 on the lower layer side in the grinding pad 9 is set to be higher in hardness (>=75 to <=85) than the conventional value, the phenomenon that the hard material 7 on the upper layer side in the grinding pad 9 is locally deformed by the load from an outermost circumferential part of a semi-conductor wafer 1, can be suppressed.
申请公布号 JPH10138123(A) 申请公布日期 1998.05.26
申请号 JP19960292420 申请日期 1996.11.05
申请人 NEC CORP 发明人 TORII YASUSHI
分类号 B24B37/20;B24B37/22;B24B37/24;B24D11/00;H01L21/304 主分类号 B24B37/20
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