| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a dummy wafer which can use in an electrostatic chuck and has excellent various characteristics by forming a thin film of electric conductive layer on the one side surface of substrate composed of insulating body providing high durability, high functional properties, etc. SOLUTION: On the one side surface of the substrate composed of the insulating body excellent in the durability, functional properties, recycling property, etc., of aluminum nitride, alumina and qualtz, the electric conductive layer with either of a silicon, silicon carbide, amorphous carbon or DLC, is formed. The aluminum nitride substrate 1 is made so as to become the same shape and the same size as a silicon wafer as a silicon wafer used in a process and this thickness is made so as to become the same as that of the silicon wafer or reduced according to the thickness of the silicon electric conductive layer 2. The thickness of this electric conductive layer 2 is formed to be about 1-100μm by means of CVD method, PVD method, sputtering method, heat filament method or coating method which has raw material paste applying and burning. Further, the insulating substrate 1 and the electric conductive layer 2 can be integrally joined and bonded through an intermediate layer.</p> |
